Exploiting the full potential of silicon carbide devices via optimized highly integrated power modules

Stippich, Alexander; de Doncker, Rik W. (Thesis advisor); Mantooth, Alan (Thesis advisor)

Aachen : RWTH Aachen University (2021)
Book, Dissertation / PhD Thesis

In: Aachener Beiträge des ISEA 155
Page(s)/Article-Nr.: 1 Online-Ressource : Illustrationen, Diagramme

Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2021


The superior electrical characteristics of silicon carbide (SiC) semiconductor enable converter operation with higher current densities, faster switching transients and increased switching frequencies. However, the fast switching of the SiC power devices amplifies the effect of power module parasitics on the electrical switching behavior. Parasitic inductances and capacitances of the module and the devices can lead to strong over-voltages, voltage ringing and leakage currents. This limits the safe operating area of the devices. Optimizing for best electrical properties usually opposes good thermal characteristics and, thus, limits the current capabilities of power modules and converters. Therefore, it is necessary to optimally combine electrical and thermal properties to utilize the full benefits of SiC devices in power converters and applications. Hence, this work demonstrates how design concepts and methods that address combined electrothermal behavior can realize power modules with higher integration and device utilization than existing technologies.